pn_NODE
代码说明:
% 用于模拟PN结中载流子的分布、电场和电势 % 总长为 L 的半导体截面上,左侧为 N 区,掺杂浓度 NA;右侧为 P 区,掺杂浓度为 ND % 假设截面积足够大( Used to simulate the PN junction carrier distribution, electric field and electric potential L total length of the semiconductor section, left for N areas, doping concentration NA the right for the P zone, doping concentration ND assumption for the cut-off an area large enough)
文件列表:
pn_NODE.m
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