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英汉词典数据 - 单词数据库 （英 转换成 汉 版本）
包含单词10万余个的电子词典数据。相关下载 （本人资源中可以找到）：英汉词典数据 - 单词数据库 （汉字 转换成 英语版本）
- 2021-05-06下载
- 积分：1
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echarts地图各省、市、县js和json
整理的Echarts省市县地图js文件和json，省市很全，不骗人，可以放心使用。希望对你们有帮助
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- 积分：1
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基于遗传算法寻优的PID控制及MATLAB仿真
基于遗传算法寻优的PID控制及MATLAB仿真28.5827.5270.826.50.625.510203040506070809010000.010.020.030.040.050.060.070.080.090.1Times[020]KW1=0.999,W2=0.001W=2.0W2=100。100Kp=16.1290K=0.2209PIDK。0.2209J=24.9812JPIDPIDMATLAB2003PIDPIDM1999020-28296999696020-282969620C1994-2012cHinaAcadcmicJournaleLcctronicPublishingHousc.Allrightsrescrvcd.http://www.cnki.nct
- 2020-12-03下载
- 积分：1
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Hidden Markov Model (HMM) matlab程序
【实例简介】dtw － DTW算法演示程序
mfcc.m － MFCC参数计算程序
dtw.m － 基本的DTW算法
dtw2.m － 优化的DTW算法
testdtw.m － DTW算法测试程序
vad.m － 端点检测程序
cdhmm － 连续高斯混合HMM演示程序
pdf.m － 高斯概率密度函数
mixture.m － 混合高斯的输出概率
inithmm.m － HMM参数初始化
getparam.m － 计算观察序列的参数
viterbi.m － 语音识别的Viterbi算法
baum.m － Baum-Welch训练算法（一次叠代）
main.m － 多HMM训练主程序
train.m － 对一个HMM进行训练的程序
recog.m － 识别程序
vad.m － 端点检测程序
mfcc.m － MFCC参数计算程序
samples.mat － 作者的汉语数码0-9录音
hmm.mat － 一次HMM训练结果
record － 辅助录音程序
record.m － 录音程序的脚本文件
record.fig － 录音程序的GUI
sample.m － 录音程序的回调函数
- 2021-11-07 00:36:50下载
- 积分：1
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MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
- 2020-12-10下载
- 积分：1
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UML网购 用例图 类图 活动图
自己做的 基于当当网 购物网站的用例图 类图 什么 的 都有 给予参考 不许直接 抄袭
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基于回溯法的TSP问题解决方案
基于回溯法的TSP问题解决方案，附有TSP问题相关的c++和matlab解法资料，及工程文件（西电02105143）
- 2020-11-30下载
- 积分：1
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ASP 租赁管理系统
ASP 租赁管理系统ASP 租赁管理系统ASP 租赁管理系统ASP 租赁管理系统
- 2020-11-30下载
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测量电子电路设计
测量电子电路设计模拟篇,觉得讲解得比较深刻，分享给大家图解实用电子技术丛书测量电子电路设计滤波器篇从滤波器设计到锁相放大器的应用「日]远坂俊昭著彭军译钭学出版社北京图字:01-2005-4936号内容简介本书是“图解实用电子技术丛书”之一,也是《測量电子电路设计—模拟篇》的姊妹篇,主要介绍如何从放大了的信号中除去有害噪声,提取有用信号的滤波技术。书中介绍处理低频信号所必需的RC滤波蕃、有源滤波器、C滤波器,以及低频滤波器中能够实现极限Q值的锁相放大器的设计方法等,同时还提供大量的实验数据和模拟数据模拟篇中主要从高轉度信号量的观点,举具体的设计和制作实例详解模拟电路的基本电路,即放大电路。本书的读者对象主要是电子工程技木人员,也可供电子、自动化、仪器仪表等相关专业的师生参考学习。图书在版编目(CIP数据测量电子电路设计:滤彼器篇远坂俊昭著;彭详,北京:科学出版社,2006(图解实用电于技术丛书ISBN7-03-01712-9I.测…Ⅱ.①远…⑨彭…皿.①电子测量-电路设计②港波器设计N.TM930.111-64中国版本图书馆CIP数据核字〔2006)第041385号女编樨:赵方青崔炳哲贲任制作:魏莲责仔印制:刘士平广封面设计:李力共京东方龙盟久有限"司制作-:tp://www.okbuok.conll.cn臀☆服出版」京乐黄城根北街16号郎政编:007lh:tp://www.sciencecon海印射有限责佳公司印刷科学出版社发行各地新华书店经销2006年E月第版开本2006年6月算一次印刷印张:171/4印数:1—4000字数;26200定价:38.00元(如有印装质量问题我社负责调换〈新欣》)刊言本书是《测量电子电路设计—模拟篇》一书的姊妹篇《测量电子电路设计—模拟篇主要着眼于对来自传感器的具有一定S/N的微弱信号电压进行放大的技术。本书的主题则是从放大了的信号中除去有害噪声,提取有用信号的滤波技术无论是由一个电阻和一个电容构成的RC滤波器,还是分析類率高达几十吉赫的炯谱分析器都统称为滤波器,可见其包含的种类和技术非常庞杂木书在介绍应用丁处理频信号的RC滤波器、有源滤波器、LC滤波器,以及低频滤波器中能够实现极限Q值的锁相啟大器〔Iock- in Amplifier)的设计方法的同时,还提供了大量的实验数据和模拟数据。通常关于滤波器的专业书籍,既要颇费力气地阐述理论,又要介绍进行设计时必要的事项。而本书则将重点放在实用设计所必需的技术问题上。这些内容对于直接进行实际设计无疑是非常有用的,只是有关滤波器基础理论的内容相对而言略显单薄。因此书木罗列出参考文献,以供希望进一步深入学习滤波器理论知识的读者参考。要想了解锁相放大器.需要具备一定的锁相环( Phase LockedIoop,PLI)基本知识,不过简明易懂地介绍PIL,中使用的滤波器参数计算方法的专业书籍并不多见。本书对于PLL中使用的滤波器的计算问题,不但在介绍其设计方法的同时还提供大量的实验数据和模拟数据,所以请因PII知识比较欠缺而感到困惑的读者务必阅读这些内容。同时,也向那些对于锁相放大器的使用方法感到困惑的在物理、化学等领域工作的渎者推荐本书。为了熟练地使用测量仪器,必须熟知测量仪器的原理。当进行某种实验时,不仅需要购置正规厂家的测量仪器建立测量系统,还需要自制夹具提高实验准确性和速度。如果任何配件都寄希望于向厂家定做,既花费时间而又未必ⅱ前言合适。请务必阅读本书,学习并掌握自制前置啟大器和滤波器、排除外来噪声的技术,以便能够完成独创性的、质量更高的实验。《测量电子电路设计——模拟篇》和本书都是在CQ出版株式会社董事兼电子电路技术研究会主持人蒲生良治先生的建议下着手编写的ε利用休息日,为进行计算杋模拟而敲键盘,握着电烙铁做作业,原本预定半年完成,结果花了5年的时间。在此,谨向耐心等待迟到稿件的蒲生良治先生和作者的恩师——(株)NF电路设计集团常务董事荒木邦尔先生,以及给予了许多帮助的电子电路技术研究会的各位同仁致以深深的谢意而且,还要向包饺子高手—妻子宏子因怠慢而深表歉意,同时感谢她给予我的支持。著目录第1章概述1.1滤波器的特性与种类……1.1.1各种滤波器—本书介绍频率意义上的滤波器……………………………………11.1.2噪声与滤波器的节宽中中+当甲·甲···鲁中世1.1.3瀌波器对白噪声的滤波效果31.1.4防混浠作用的低通滤波器……………………51.1.5高通瀌波器(HPF)的作用1.1.6带通滤波器(BPF)的作用……1.1.7带阻滤波器(BEF)的作用1.1.8模拟滤波器与数字滤波器1.1.9能够自制的滤波器…………………………101.10由厂家制作的滤波器1.2滤波器的频率响应与时间响应特性■画121.2.1滤波器的阶数与衰减陡度………………121.2.2最大平坦:巴特沃斯特性3.2.3快速调整阶跃响应的贝塞尔特性131.2.4实现陡峭特性的切比雪夫特性141.2.5更加陡峭椭圆( Elliptic)特性151·2.6滤波器的副作馬—对响应特性的影响■■1.2.7髙通滤波器的时间哨应特性…画中b1.2.8带通滤波器的时间啊应特性……………19第2章RC滤波器与RC电路网络的设计…2.1最简单的RC滤波器曾即鲁鲁自·鲁申使费曹鲁啬轟最2.1.1RC低通滤波春的特性2.1.2DC前置放大春上附加RC濾波器222.1.3RC滤波器的多级连接23目录2加深对RC电路网络的印象262.2.1表现电路网络动作的万能曲线2.2.2设时利用渐近线272.2.3高頻截止/低频截止的A万能曲线282.2.4描述相位返回特性的B万能曲线…295PLL电路中应用的高频截止的B万能曲线…302.2.6应用于OP放大器相位补偿的低频截止的B万能曲线第3章有源滤波器的设计373.1概述373.1.1有源湖波器—确定参数值时的自由度高3.1.22阶有源濾波器设计基础3.2有源低通滤波器的设计………403.2.1经掌使用的正反馈型2阶IPF(增益=1)的构成3.2.25阶巴特沃斯LPF的计算例413.2.3使IPF具有放大率的滤波电路3.2.4王反缋型IPF(增益≠1)的构成…433.2.5减小元件灵敏度和失真的多重反愦型LPF…458,2.6有源IPF的高频特性……………………473.3有源高通滤波器的设计……493.3.1正反馈型2阶HPF的构成3.3.25阶切比雪夫HPF的计算例…………………5033.3多重反馈型HHF的构成…3.4状态可调滤波器的设计523.4.1状态可调滤波器的概念翻鲁音垂阝垂垂曲4非省当··垂523.4.2反转型与非反转型在特性上的差别…533.4.3在可变頻率-可变Q的通用滤波器中的应用…573.4.4状恋可调滤波器模块3.4.5低失真率的双截型濾波器583.5带通滤波器的设计…593.5.1将IPF与HPF级联59专栏A状态可调滤波器在低失真率振荡晷中的应用…615.2Q=10以下的1个OP放大器的多重反馈型BPF……………………………623.5.3中心频率为1kHz,Q=5的带通滤波器……633,5.42个放大器的高Q值BPF653.5.5能够用于评价OP故大器噪声的带宽100Hz的BPF………………………663.6带阻滤波器的设计……………………………693,6.1使用BPF的带阻滤波器693.6.2测量失真用的双T陷波滤波器aaaa,了附录有源滤波器设计用的归一化表3第4章LC滤波器的设计794.1LC滤波器概述冒留冒·d中「司自e业宁皇费曲日4.1.1LC滤波器在1ckHz以上的使用价值高4.1.2利用归一表和模拟器使设计变得简单…804.1.3LC滤波器的两种类型………………814.2LC滤波器的设计4.2.1低通LC濾波器的设计…4.2.2归一化表的使黑方法………834.2.3由低通滤波器(LPF)变换为高通滤波器(HPF)8442.4变换为带通滤波罨(BPF)………85专栏B函数台式计算机的应用42.5IPF的带宽越謇响应越慢…………………894.3LC滤波器的实验制作914.31附有5阶低通滤波器的前置放大器………914.3.2巴特沃斯BPF的试制94第5章模拟LC型有源滤波器的设计975.1模拟LC的概念……975.1.1不希望使用线圈甲q曾曹4975.1.2实现FDNR的电路………985.2实用的FDNR滤波器的设计………………985.2.15阶IPF均设计985.2.2特点—不受OP放大器直流漂移的影响…1005.2.3注意最大输入电平1025.2.4信号源电阻为Og的FDNR濾波器…-102目录5,2.5信号源电阻为0Ω的FDNR5阶低通滤波器的试制………10552.6抗误差用7阶切比雪夫滤波春的设汁……108特性的检验1105,2,8利用高速A/D转换器减轻滤波器的负担1125.2.9将电容变换为电感的GIC113第6章滤波器使用的RLC…1176,1滤波器使用的电阻器1176.1.1各种电阻器……176.1.2滤波瘗电路中的金属膜电阻春……………1176.1.3电阻的频率特性……………………1196.2滤波器使用的电容器………………………12⊥6.2,1电容握要注意等效串联电阻Rs…………1216.2,2糈潓波馨中不使用铝电解电容器1246.2.3叠居陶瓷电容器1266.2,4薄膜电容器…………………1286.2,5苯乙烯电容器1306.2.6云母电容器1306.3滤波器使用的线圈1336,3.1线圈的种类和等效电路…………………1336.3.2徵型电感〔圆筒形………………·1356.3.3壶形轶心……………………………1386.3.4用壶形铁心制作电感器的要点……………*1396.3.5基干壶形铁心的100mH电感器的设计…1426.3.5方形金属外壳电感器非着毒看D··晶↓d■,南1456.3.7环形铁心…………………………………14763.8环形铁心电感器的设计例148专栏C关于E系列标准值…………………151第7章变压器对噪声的阻断/抑制作用1537.1变压器概述…………………………………1537.1.1不可轻视变压器的作用…………1537,],2变压器的基本动作…1537.1.3变压器的等效电路154
- 2021-05-06下载
- 积分：1
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SIM800A(STM32F103C8T6)
【实例简介】采用SIM800A和STM32单片机，通过单片机读取DHT11的监测的室内温湿度，通过AT指令使SIM800A连接到云平台服务器，并将温湿度数据上转至云平台。
- 2021-11-03 00:31:18下载
- 积分：1
